Epitaxial ferromagnetic Fe<inf>3</inf>Si on GaAs(111)A with atomically smooth surface and interface
Journal
Applied Physics Letters
Journal Volume
107
Journal Issue
12
Date Issued
2015
Author(s)
Liu, Y.C.
Chen, Y.W.
Tseng, S.C.
Chang, M.T.
Lo, S.C.
Lin, Y.H.
Cheng, C.K.
Hung, H.Y.
Hsu, C.H.
Kwo, J.
Abstract
Single crystal ferromagnetic Fe3Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 ? and interfacial roughness of 1.9 ?, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe3Si/GaAs(111) yielded a saturation moment of 990 emu/cm3 with a small coercive field ?1 Oe at room temperature.
Type
journal article