Low temperature photoluminescence spectra of (001) CdTe films grown by molecular beam epitaxy at different substrate temperatures
Resource
J. Lumin.,35,329-341.
Journal
Journal of Luminescence
Pages
329-341
Date Issued
1986-01
Date
1986-01
Author(s)
Feng, Z.C.
Mascarenhas, A.
Choyke, W.J.
Abstract
CdTe films grown by molecular beam epitaxy on (001) InSb substrates at twelve different substrate temperatures, Ts, are examined by means of low temperature photoluminescence (PL) in the energy range 1.61 eV to 140 eV. Luminescence spectra are reported from three different energy regions and are observed for substrate temperatures from 170°C to 285°C. The spectral regions are as follows: 1.61 eV to 1.56 eV with exciton emission, 1.56 eV to 1.51 eV with free-to-bound (FB) and donor-acceptor pair (DAP) transitions and 1.50 eV to 1.40 eV with as yet unidentified lines and broad band structure. The use of luminescence as a means of assessing film perfection is discussed. © 1986.
SDGs
Type
journal article