Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y 2 O 3 /n-GaAs(001)
Journal
Applied Physics Express
Journal Volume
9
Journal Issue
8
Date Issued
2016
Author(s)
Abstract
Abstract A low interfacial trap density ( D it ) of 2.2 �� 10 11 eV ?1 cm ?2 has been achieved with an atomic layer deposited (ALD) single crystal Y 2 O 3 epitaxially on n-GaAs(001), along with a small frequency dispersion of 10.3% (2.6%/decade) at the accumulation region in the capacitance�Vvoltage ( C �V V ) curves. The D it and frequency dispersion in the C �V V curves in this work are the lowest among all of the reported ALD-oxides on n-type GaAs(001). The D it was measured using the conductance�Vvoltage ( G �V V ) and quasi-static C �V V (QSCV) methods. Moreover, the heterostructure was thermally stable with rapid annealing at 900 �XC under various durations in He and N 2 , which has not been achieved in the heterostructures of ALD-Al 2 O 3 or HfO 2 on GaAs.
Type
journal article