Enhancing critical dimension measurement with nanometer scale using CNNs and optical theory-derived 3D point spread function
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Part Of
Proceedings of SPIE - The International Society for Optical Engineering
Start Page
24
Date Issued
2025-02-24
Author(s)
Editor(s)
Sendelbach, Matthew J.
Schuch, Nivea G.
Abstract
Optical image metrology is vital in semiconductor manufacturing, offering non-contact, high-resolution, high-speed measurements. This AI-driven approach integrates CNN with a physics-based 3D point spread function (PSF) for enhanced critical dimension (CD) measurement. A focused ion beam (FIB) artifact captures the PSF, while imaging noise is minimized using a parameterized 3D PSF from the Gibson-Lanni model with Zernike polynomials. A super-resolution CNN with Wiener deconvolution refines resolution. Preliminary experimental results show this method doubles the depth of field (DOF) and enables nanometer-accurate CD measurement, improving semiconductor manufacturing and automated optical inspection (AOI).
Event(s)
Metrology, Inspection, and Process Control XXXIX 2025, San Jose, 24 February 2025 through 28 February 2025. Code 209146
Subjects
Advanced semiconductor packaging
AI deep learning
Automated Optical Inspection (AOI)
Critical Dimension (CD)
Optical Metrology
Super resolution
Publisher
SPIE
Type
conference paper