Effect of Fabrication Parameters on Three-Dimensional Nanostructures of Bulk Heterojunctions Imaged by High-Resolution Scanning ToF-SIMS
Resource
ACS Nano, 4(2), 833-840
Journal
ACS Nano
Pages
833-840
Date Issued
2010
Date
2010
Author(s)
Yu, Bang-Ying
Lin, Wei-Chun
Wang, Wei-Ben
Iida, Shin-ichi
Chen, Sun-Zen
Liu, Chia-Yi
Kuo, Che-Hung
Lee, Szu-Hsian
Kao, Wei-Lun
Yen, Guo-Ji
You, Yun-Wen
Liu, Chi-Ping
Jou, Jwo-Huei
Shyue, Jing-Jong
Abstract
Solution processable fullerene and copolymer bulk heterojunctions are widely used as the active layers of solar cells. In this work, scanning time-of-flight secondary ion mass spectrometry (ToF-SIMS) is used to examine the distribution of [6,6]phenyl-C61-butyric acid methyl ester (PCBM) and regio-regular poly(3-hexylthiophene) (rrP3HT) that forms the bulk heterojunction. The planar phase separation of P3HT:PCBM is observed by ToF-SIMS imaging. The depth profile of the fragment distribution that reflects the molecular distribution is achieved by low energy Cs(+) ion sputtering. The depth profile clearly shows a vertical phase separation of P3HT:PCBM before annealing, and hence, the inverted device architecture is beneficial. After annealing, the phase segregation is suppressed, and the device efficiency is dramatically enhanced with a normal device structure. The 3D image is obtained by stacking the 2D ToF-SIMS images acquired at different sputtering times, and 50 nm features are clearly differentiated. The whole imaging process requires less than 2 h, making it both rapid and versatile.
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Type
journal article
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