新穎光電材料與奈米結構元件之研究─子計畫一：新穎光電材料與奈米結構元件光學性質之研究(2/2)
Date Issued
2002-09-30
Date
2002-09-30
Author(s)
詹國禎
DOI
902215E002021
Abstract
The optical properties of InGaAs/GaAs quantum dots (QDs) were investigated by
temperature-dependent photoluminescence (PL) and photoreflectance (PR) spectroscopies. The surface
morphology and structure analysis of InGaAs QDs were also examined and characterized by a field
emission scanning electron microscope (SEM) and an atomic force microscope (AFM). The area
density of the QDs is on an order of magnitude about 1×1010 dots/cm2. The PL results exhibited 5
major energy peaks, two of which are attributed to InGaAs QDs, one is attributed to the InGaAs
wetting layer and the other two are attributed to GaAs band-gap transitions. Two of the low energy
features are identified to the optical transitions of the ground state. They were originated from the two
kinds of InGaAs QDs which might be formed with slight change of the indium composition. The
results of PR measurements which reveal energy features on the high energy side contributed by GaAs
is also reported.
Subjects
InGaAs
Quantum dots
Photoluminescence
SEM
AFM
Publisher
臺北市：國立臺灣大學光電工程學研究所
Type
report
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