Dynamic Rdsonand VthFree 15 V E-mode GaN HEMT Delivering Low sFOM of 13.1 mΩ•nC and over 90% Efficiency at 10 MHz for Buck Converter
Journal
Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Journal Volume
2022-May
ISBN
9781665422017
Date Issued
2022-01-01
Author(s)
Li, William S.C.
Zhou, David C.
Yan, H.
Zhang, J. F.
Ma, H. H.
Chen, C.
Liu, X. M.
Li, W. P.
Wu, Marco
Chen, Larry
Wang, Felix
Wong, Roy K.Y.
Zhang, Jeff
Lee, Mark
Cheng, Echo
Han, Andy
Abstract
To achieve fast, efficient, reliable and compact power converter, this paper reports 15 V GaN HEMT featuring: (i) low sFoM of 13.1 mΩ•nC, (ii) robust reliability under constant gate and drain stress over wide temperature range from -40 °C to 150 °C in 1000 hours, (iii) dynamic Rdson and Vth free operation demonstrated in MHz switching frequency converters. The buck converter with the fabricated GaN HEMTs in half bridge configuration demonstrates over 90% efficiency at 10 MHz under conversion ratio of 5 V Vin/ 1.5~4 V Vout. When the switching frequency increases to 30 MHz, the converter still remains over 80% efficiency.
Subjects
dynamic free | FoM | GaN HEMT | MHz operation | reliability
Type
conference paper