Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector
Journal
Applied Physics Letters
Journal Volume
78
Journal Issue
17
Pages
2428-2430
Date Issued
2001
Author(s)
Abstract
A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector operated in the 2.5-7 μm range by photovoltaic and photoconductive mixed-mode near-room-temperature operation (≥250 K) was demonstrated. The specific peak detectivity D* is 2.4×108 cm Hz1/2/W at 250 K. The use of high-band-gap Al0.3Ga0.7As barriers at both sides of the InAs quantum-dot structure and the long carrier recombination time are the key factors responsible for its near-room-temperature operation. © 2001 American Institute of Physics.
SDGs
Type
journal article