A miniature Q-band low noise amplifier using 0.13-/spl mu/m CMOS technology
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
16
Journal Issue
6
Pages
327--329
Date Issued
2006-06
Author(s)
Abstract
A miniature Q-band low noise amplifier (LNA) using 0.13-�gm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm 2 . The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.
SDGs
Type
journal article