Metal-semiconductor-metal travelling wave-photodetectors
Resource
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Journal
Conference on Lasers and Electro-Optics, 1999. CLEO '99
Pages
-
Date Issued
1999-05
Date
1999-05
Author(s)
DOI
N/A
Abstract
Summary form only given. The bandwidth/efficiency of traditional vertically-illuminated metal-semiconductor-metal (MSM) photodetectors are limited by the RC time constant, the carrier drift time, and the carrier recombination time. In order to shorten the carrier transit/recombination time, 25 nm finger spacing has been fabricated by using high resolution e-beam lithography on low-temperature (LT) GaAs.
SDGs
Type
journal article
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