High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer
Journal
Applied Physics Letters
Journal Volume
78
Journal Issue
18
Pages
2784-2786
Date Issued
2001
Author(s)
Abstract
Ten-stacked InAs/GaAs quantum-dot infrared photodetectors with single Al0.3Ga0.7As blocking layers at either side of the stacked dots are investigated. With peak responsivity 214 mA/W and specific detectivity 1.17 × 1010 Cm Hz1/2/W at 6 μm, quantum-dot infrared photodetectors with single-sided blocking layers are superior in responsivity with compatible detectivity as compared to those without blocking layers. Enhancement of the photoelectron avalanche process and the absence of negative differential conductance are observed. The devices exhibit two different infrared absorption regions at 2-6 and 6-10 μm, which indicates a wide detection window of the device. © 2001 American Institute of Physics.
SDGs
Type
journal article