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College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
Method of forming a gate insulator in group III-V nitride semiconductor devices
Details
Method of forming a gate insulator in group III-V nitride semiconductor devices
Date Issued
2007-07
Author(s)
LUNG-HAN PENG
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/333909
Type
patent