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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Closed-Form Partitioned Gate Tunneling Current Model for NMOS Devices with an Ultra-thin Gate Oxide
Details
Closed-Form Partitioned Gate Tunneling Current Model for NMOS Devices with an Ultra-thin Gate Oxide
Journal
Solid State Electronics
Journal Volume
53
Journal Issue
11
Pages
1191-1197
Date Issued
2009-11
Author(s)
C. H. Lin
J. B. Kuo
JAMES-B KUO
DOI
10.1016/j.sse.2009.08.007
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/351949
Type
journal article
