Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures
Resource
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Journal
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Pages
-
Date Issued
2003-12
Date
2003-12
Author(s)
Tang, Tsung-Yi
Teng, Chih-Chung
Lin, En-Chiang
Chen, Meng-Ku
Wu, Cheng-Ming
Chen, Jiun-Yang
Cheng, Yung-Chen
Feng, Shih-Wei
DOI
N/A
Abstract
Optical properties and material microstructures of InGaN/GaN quantum wells structures with various nominal indium contents, quantum well widths, and different thermal annealing conditions were compared to show the effects of indium aggregations and strains. © 2003 IEEE.
Other Subjects
Indium; Nanostructures; Optical properties; Photonics; Quantum well lasers; Indium content; InGaN/GaN quantum well; Properties and materials; Thermal-annealing; Well width; Semiconductor quantum wells
Type
conference paper
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