Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6× 106 cm2 /V s
Journal
Applied Physics Letters
Journal Volume
94
Journal Issue
18
Date Issued
2009
Author(s)
Abstract
We report the observation of a two-dimensional electron gas (2DEG) in a Si quantum well with mobility 1.6��106?cm2/Vs at carrier densities n?1.5��1011/cm2. The 2DEG, which resides in an undoped Si/SiGe heterostructure, is capacitively induced using an insulated-gate field-effect transistor (IGFET) device structure; its mobility is determined from transport and quantum Hall effect measurements at 0.3 K. Our IGFET device makes it now possible to access by transport experiments the low electron density regime down to n��1��1010/cm2.
SDGs
Type
journal article