Crack-free GaN deposition on Si substrate with temperature-graded AlN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells
Journal
Journal of Crystal Growth
Journal Volume
396
Pages
1-6
Date Issued
2014
Author(s)
Chen, C.-Y.
Chang, W.-M.
Chung, W.-L.
Hsieh, C.
Liao, C.-H.
Ting, S.-Y.
Chen, K.-Y.
Kiang, Y.-W.
Yang, C.C.
Su, W.-S.
Type
journal article