Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN
Journal
Applied Physics Letters
Journal Volume
82
Journal Issue
5
Pages
718-720
Date Issued
2003
Author(s)
Watanabe, K.
Yang, J.R.
Huang, S.Y.
Inoke, K.
Hsu, J.T.
Tu, R.C.
Yamazaki, T.
Nakanishi, N.
Shiojiri, M.
Abstract
We have determined the structure of inverted hexagonal pyramid defects (IHPs) in multiple quantum wells InGaN/GaN by high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM). HAADF STEM images reveal definitely that the IHP nucleates at a threading dislocation and grows in the form of a thin six-walled structure with InGaN/GaN {101?1} layers. It has been found that IHPs start even at In-rich dots under adverse growth conditions.
SDGs
Type
journal article