Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
Details
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
Journal
Applied Physics Letters
Journal Volume
99
Journal Issue
15
Date Issued
2011
Author(s)
CHEE-WEE LIU
Lu, T.M.
Lee, C.-H.
Huang, S.-H.
Tsui, D.C.
CHEE-WEE LIU
DOI
10.1063/1.3652909
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-80055015445&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/365221
Type
journal article
