Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition

Resource

Applied Surface Science 254 (19): 6261-6264

Journal

Applied Surface Science

Journal Volume

254

Journal Issue

19

Pages

6261-6264

Date Issued

2008

Date

2008

Author(s)

Lee, S.W.

Chen, P.S.

Cheng, S.L.

Lee, M.H.

Chang, H.T.

Lee, C.-H.

Liu, C.W.

URI

Type

journal article

File(s)

Name

83.pdf

Size

679.22 KB

Format

Adobe PDF

Checksum

(MD5):4a66f85869065fca1d637c1eb78e509a