Study on the Low-loss RF CMOS Devices Based on Porous Silicon Substrate
Date Issued
2006
Date
2006
Author(s)
Ding, Ling-Yi
DOI
zh-TW
Abstract
With the rapid growth of wireless communication system, the operation frequency is raised again and again. Although raising the operation frequency could load more data, it is not good for CMOS passive devices because of its substrate-loss.
Silicon a stable material is used for CMOS process but the parasitic effect which between silicon substrate and CMOS passive devices decreases the quality factor of CMOS passive devices at high frequency. The parasitic effect is induced at high frequency; the magnetic flux which penetrates the silicon substrate induces inverse eddy current. The qulity factor of CMOS passive devices will decrease because of the inverse eddy current. A high resistivity material can’t easily induce inverse eddy current so gallium arsenide is suitable for RF devices than silicon. Gallium arsenide maybe a good substrate but it can’t integrate all circuits on a chip. If we want to achieve SOC, we should only choice silicon.
This thesis transforms silicon substrate into porous silicon substrate in order to improve the characteristics of RF CMOS devices. Electrochemistry etching is used to form a porous silicon layer on the silicon substrate, which provides a low-loss substrate and better quality factor. In this study, a novel CMOS-compatible porous silicon process is used to transform the silicon substrate and improve the characteristics of RF CMOS devices.
Subjects
微機電製程
多孔矽
矽基射頻元件
系統單晶片化
Electro-mechanics system
Porous silicon
RF CMOS devices
System on a chip
Type
thesis
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