The Growth of Highly Mismatched InxGa1-xAs(0.28≦x≦1) on GaAs by Molecular Beam Epitaxy
Resource
Journal of Appllied Physics, v.73, p.4916-4926
Journal
Journal of Applied Physics
Journal Volume
v.73
Pages
4916-4926
Date Issued
1993
Date
1993
Author(s)
Type
journal article