CMOS/SiGe BiCMOS製程之2.4GHz 射頻功率放大器與PCB模組製作
CMOS/SiGe BiCMOS 2.4GHz RF Power Amplifier on PCB Module
Date Issued
2005
Date
2005
Author(s)
Lai, Hung Hui
DOI
en-US
Abstract
In this thesis, the basic concepts of power amplifier design are described. And we design and fabricate 2.4 GHz CMOS and SiGe power amplifiers used for IEEE 802.11b/g application. For 0.25 µm CMOS technology, the amplifier achieves linear gain = 26 dB, Psat = 21.8 dBm, P1dB= 18.5 dBm and maximum PAE= 23 %. For 0.18 µm CMOS technology power amplifier, comparing to constant voltage bias, the 1dB compress point improves 1.3 dBm with bias control circuit. For 0.35 µm SiGe HBT power amplifier, it achieves linear gain= 27.6 dB, Psat= 20.4 dBm, P1dB= 20.7 dBm, maximum PAE= 24 %, and maximum output power 17.8 dBm for IEEE 802.11b, 15.2 dBm for IEEE 802.11g. Besides, we designed a dual SiGe power amplifier for IEEE 802.11n application. For optimal impedance matching for power amplifier, we introduce how to assemble the power amplifier module with PCB by load pull system.
Subjects
功率放大器
射頻
power amplifier
RF
2.4GHz
Type
thesis