Preparation of α-Fe2O3 thin films and Ti4+ and Ge4+ doped α-Fe2O3 thin films for photoelectrochemical cells
Date Issued
2006
Date
2006
Author(s)
Wang, Teng-Yu
DOI
zh-TW
Abstract
To utilize hydrogen as a clean and renewable energy to replace petroleum, hydrogen can be gained by a photoelectrochemical cell to split water by solar light. The objective of this study is to prepare semiconductor electrode for photoelectrochemical cells. Iron oxide (α-Fe2O3, hematite) was chosen as the material, and the thin-film electrode was prepared by spin coating with precursors. The photoelectrochemistry of the thin-film electrode was studied.
At first, the difference of the iron(III) chloride and iron(III) nitrate precursor was studied. By the photoelectrochemical results, the film prepared by iron(III) chloride precursor showed better photoelectrochemical response than the film prepared by iron(III) nitrate precursor, and the reasons were discussed.
The effect of solvent of the precursor was studied. The experimental results showed the photoelectrochemical response of iron oxide film was affected by the solvent of the precursor. When the solvent of precursor was isopropanol, the photoelectrochemical response of iron oxide was the best among all the solvents used in the study.
Finally, the effect of doping Ti4+ and Ge4+ into iron oxide was studied. The photoelectrochemical response was expected to be improved by doping Ti4+ or Ge4+ into iron oxide. By the photoelectrochemical results, doping Ti4+ into iron oxide did improve the photocurrent of the iron oxide film, but doping Ge4+ into iron oxide decreased the photocurrent of the iron oxide film.
Subjects
氧化鐵
薄膜
光分解水
光電化學電池
iron oxide
thin film
split water
photoelectrochemical cell
SDGs
Type
thesis
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