Enhancing photoluminescence quenching and photoelectric properties of CdSe quantum dots with hole accepting ligands
Resource
Journal of Materials Chemistry 18: 675-682
Journal
Journal of Materials Chemistry
Journal Volume
18
Journal Issue
6
Pages
675-682
Date Issued
2008
Author(s)
Abstract
CdSe quantum dots have been encapped with aromatic ligands: α-toluenethiol, thiophenol, and p-hydroxythiophenol to enhance the photoluminescence (PL) quenching and photoelectric properties of the quantum dots. The aromatic ligand capped CdSe quantum dots are prepared through ligand exchange with trioctylphosphine oxide (TOPO) capped CdSe quantum dots. The XPS surface chemistry analysis and elemental analysis has confirmed the success of ligand exchange from TOPO to aromatic ligands. Both XRD and HRTEM-SAED studies indicate the crystalline structure of CdSe quantum dots not only remains but is also improved by the ligand exchange of TOPO with thiol molecules. Time resolved PL decay measurements indicate thiophenol and p-hydroxythiophenol ligands effectively quench the emission and have much shorter PL lifetimes than that of TOPO and that of α-toluenethiol. Thus, both thiophenol and p-hydroxythiophenol can act as an effective acceptor for photogenerated holes through aromatic π-electrons. Thiophenol also exhibits good charge transport behavior showing a 10-fold increase in short circuit current density (I sc) as compared with TOPO in the photocurrent study of fabricated photovoltaic devices. © The Royal Society of Chemistry 2008.
SDGs
Other Subjects
Ligands; Photoelectricity; Photoluminescence; Quenching; Semiconducting cadmium compounds; X ray photoelectron spectroscopy; Ligand exchange; Photoelectric properties; Semiconductor quantum dots
Type
journal article
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