Transport Mechanisms in n-Type Porous Silicon Obtained by Photoelectrochemical Etching
Resource
CHINESE JOURNAL OF PHYSICS, VOL. 38, NO. 2-I
Journal
CHINESE JOURNAL OF PHYSICS
Journal Volume
VOL. 38
Journal Issue
NO. 2-I
Pages
-
Date Issued
2000-04
Date
2000-04
Author(s)
Chen, C.H.
Chen, Y.F.
DOI
2006092712003714868
Abstract
The electrical conduction properties of metal/porous silicon/n-Si/metal have been investigated
using current-voltage (I-V) measurements. The characteristics for all devices show
a rectifying behavior with ideality factor close to unity. A value of 0.79 eV for the barrier
height is found to increase with rising temperature. A band model is proposed in order to
explain the observed characteristics.
Publisher
臺北市:國立臺灣大學物理系所
Type
journal article
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