Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling

Resource

Microelectronic Engineering, 87(4), 580-583

Journal

Microelectronic Engineering

Pages

580-583

Date Issued

2010

Date

2010

Author(s)

Ho, Ching Yuan

Shih, Kai-Yao

He, Jr Hau

DOI

URI

Type

journal article

File(s)

Name

02.pdf

Size

23.23 KB

Format

Adobe PDF

Checksum

(MD5):44bf0c2c62acd759da04ba0f2e3dd46f