Influence of separate confinement heterostructure on carrier distribution in ingaasp laser diodes with nonidentical multiple quantum wells
Resource
Jpn. J. Appl. Phys.,43(10),7032-7035.
Journal
Japanese Journal of Applied Physics
Journal Volume
43
Journal Issue
10
Pages
7032-7035
Date Issued
2004-01
Date
2004-01
Author(s)
Type
journal article
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Format
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