Dual-Frequency Impedance Transformation Technique Incorporated in a 10 and 24 GHz Dual-Band Amplifier
Date Issued
2011
Date
2011
Author(s)
Hsieh, Kai-An
Abstract
This thesis presents a complete theory of a dual-frequency impedance transformer based on transmission lines. The theoretical analysis is insightfully described, and a limitation from the design equations is investigated. Subsequently, a design procedure is proposed to resolve this situation. To substantiate the theory, a dual-band amplifier operating at 10 and 24 GHz is fabricated by standard 0.13-μm 1P8M CMOS technology. The amplifier involves synthetic quasi-TEM transmission lines to build the dual-frequency matching circuits. The comparisons between simulations and on-wafer measurements are reported to establish the feasibility and flexibility of the presented technique in microwave applications.
Subjects
Amplifier
CMOS
dual-frequency
impedance transformer
transmission line
Type
thesis
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ntu-100-R98942018-1.pdf
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