Circuit sensing techniques in magnetoresistive random-access memory
Journal
Journal of Low Power Electronics
Journal Volume
14
Journal Issue
2
Pages
206-216
Date Issued
2018
Author(s)
Wu, B.-C.
Abstract
In this paper, we review circuit techniques for read performance enhancement of magnetic random-access memories (MRAMs) that are based on magnetic tunnel junction (MTJ) devices with spin transfer torque (STT) switching mechanism for normally-off and nonvolatile computing. First, a brief discussion of the construction and operation of STT-MRAM, and the mechanism of operation of STT-MTJ devices is presented. Circuit sensing techniques are then introduced and divided into two categories - current mode and voltage mode - according to their sensing scheme. These techniques are described in detail with comprehensive case studies from literature, followed by a thorough comparison and discussion of their respective design space. Copyright © 2018 American Scientific Publishers All rights reserved.
Subjects
Embedded nonvolatile memory (eNVM); Low-power memory circuit; Magnetic random access memory (MRAM); Magnetic tunnel junction (MTJ); Nonvolatile computing; Spin transfer torque (STT); Spintronics
Type
journal article