A 10Gb/s burst-mode transimpedance amplifier in 0.13μm CMOS
Journal
IEEE Asian Solid-State Circuits Conference (A-SSCC)
Pages
400-403
Date Issued
2007-11
Author(s)
Hong-Lin Chu
Abstract
This paper presents a 10Gb/s burst-mode transimpedance amplifier (BMTIA), which has been fabricated in a 0.13�gm CMOS process. For the burst-mode receivers in passive optical networks (PONs), the preamplifier has to receive the burst-mode data packages with different amplitudes and provides a short settling time which is required for high data transmission efficiency. In this paper, a 10Gb/s BMTIA is presented to achieve a wide dynamic range of 42.5dB and fast settling time within 1ns. It dissipates 7.2mW excluding output buffer from a single 1.2V supply voltage.
SDGs
Type
conference paper