High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures
Journal
Applied Physics Letters
Journal Volume
100
Pages
63506
Date Issued
2012-01
Author(s)
Abstract
We investigate the transport properties of thin-film transistors using indium oxide (In2O3)/gallium oxide (Ga2O3) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to �gFE = 51.3 cm2/Vs and ON/OFF current ratio to 108 due to combinatorial layer thickness modulation. With the Ga2O3 layer thickness ratio increase to R = 14.35%, these observations are accompanied with one-order-of-magnitude reduction in the transistor subthreshold swing to 0.38 V/decade and suggest a trap-limited conduction mechanism upon which the reduced scattering centers due to annihilation of subgap states improve the device electric characteristics without post-growth annealing.
SDGs
Type
journal article