Enhancement in Thermoelectric Properties of TiS2 by Sn Addition
Journal
Journal of Electronic Materials
Journal Volume
47
Journal Issue
6
Pages
3091-3098
Date Issued
2018
Author(s)
Abstract
A series of Sn added TiS2 (TiS2:Snx; x = 0, 0.05, 0.075 and 0.1) were prepared by solid state synthesis with subsequent annealing. The Sn atoms interacted with sulfur atoms in TiS2 and formed a trace amount of misfit layer (SnS)1+m(TiS2−δ)n compound with sulfur deficiency. A significant reduction in electrical resistivity with moderate decrease in the Seebeck coefficient was observed in Sn added TiS2. Hence, a maximum power factor of 1.71 mW/m-K2 at 373 K was obtained in TiS2:Sn0.05. In addition, the thermal conductivity was decreased with Sn addition and reached a minimum value of 2.11 W/m-K at 623 K in TiS2:Sn0.075, due to the impurity phase (misfit phase) and defects (excess Ti) scattering. The zT values increased from 0.08 in pristine TiS2 to an optimized value of 0.46 K at 623 K in TiS2:Sn0.05.
SDGs
Publisher
Springer New York LLC
Type
journal article