Grain Boundary Diffusion of Ni through Au-Doped Ni3Sn2 Intermetallic Compound for Technological Applications
Journal
Journal of Electronic Materials
Journal Volume
50
Journal Issue
12
Pages
6590-6596
Date Issued
2021
Author(s)
Abstract
In recent years Au-Sn solid–liquid interdiffusion (SLID) has become a widely known bonding method to deliver promising die attaching techniques for high-temperature operating electronic vehicles. Insulated-gate bipolar transistor (IGBT) chips were assembled on direct bonded copper substrates by utilizing a Ni/Au-20Sn/Ni system based on SLID. Our previous research investigated the intermetallic compounds formed after isothermal aging. Electron microscopic instrumentation was employed to determine the interfacial reactions between AuSn and nickel (Ni). After total consumption of AuSn at the rim sites of (Ni, Au)3Sn2 grains, an increased concentration of Ni was identified. Prolongation of aging time at 240°C helped in precipitation of Ni3Sn at the interface of (Ni, Au)3Sn2 and Ni. This current research has theorized the mechanism of the intermetallic compounds formed at the rim sites of the Au-Sn System. From the results, the Au-Sn eutectic system attained in this article is ideal to assemble an IGBT for high-temperature devices using SLID. ? 2021, The Minerals, Metals & Materials Society.
Subjects
aging time
AuSn
direct bonded copper substrate
insulated-gate bipolar transistor
Solid–liquid interdiffusion
Copper
Eutectics
Gold alloys
Grain boundaries
Insulated gate bipolar transistors (IGBT)
Intermetallics
Nickel
Substrates
Tin alloys
Aging time
Copper substrates
Direct bonded copper substrate
Direct bonded coppers
Grain-boundary diffusion
Insulatedgate bipolar transistor (IGBTs)
Intermetallics compounds
Solid/liquid
Technological applications
Binary alloys
Type
journal article