Broadband SiGeSi quantum dot infrared photodetectors
Journal
Journal of Applied Physics
Journal Volume
101
Journal Issue
3
Date Issued
2007
Author(s)
Abstract
The broadband absorption of metal-oxide-semiconductor SiGe?Si quantum dot infrared photodetectors is demonstrated using boron �_ doping in the Si spacer. The peak at 3.7�V6�gm results from the intersubband transition in the SiGe quantum dot layers. The other peak at 6�V16�gm mainly comes from the intraband transition in the boron �_-doping wells in the Si spacers. Since the atmospheric transmission windows are located at 3�V5.3 and 7.5�V14�gm, broadband detection is feasible using this device. The �_ doping in SiGe quantum dots and Si0.9Ge0.1 quantum wells is also investigated to identify the origin of the absorption.
Type
journal article