An InP HEMT W-band amplifier with monolithically integrated HBT bias regulation
Journal
IEEE Microwave and Guided Wave Letters
Journal Volume
7
Journal Issue
8
Pages
222-224
Date Issued
1997
Author(s)
Kobayashi, K.W.
Wang, H.
Lai, R.
Tran, L.T.
Block, T.R.
Liu, P.H.
Cowles, J.
Chen, Y.C.
Huang, T.-W.
Oki, A.K.
Yen, H.C.
Abstract
This paper presents the results of the first W-band InP-based high electron mobility transistor-heterojunction bipolar transistor (HEMT-HBT) monolithic microwave integrated circuit (MMIC). The InP-based HBT and HEMT devices are monolithically integrated using selective molecular beam epitaxy (MBE). The amplifier demonstrates the highest frequency performance MMIC so far obtained with this technology. A single-stage HBT op amp current regulator is integrated with a single-stage HEMT amplifier in order to regulate and self-bias the MEMT device over process, temperature, and age variations. The HBT regulates the HEMT bias to within 3% of the bias current while consuming only a small fraction of the total dc power. The HEMT W-band amplifier achieves a radio frequency (RF) gain of 8.25 and 5.9 dB at 77 and 94 GHz, respectively. A minimum noise figure of 4.2 dB was also recorded at 93.5 GHz. The RF performance achieved from the HEMT amplifier using the InP-based HEMT-HBT integrated technology is comparable to that of InP-based single-technology HEMT performance.
SDGs
Type
journal article