Transport in Two-dimensional GaAs Electron Systems and Optical Properties of InGaAsN Single Quantum Well
Date Issued
2004
Date
2004
Author(s)
Wang, Hong-Syuan
DOI
en-US
Abstract
This dissertation describe the measurements on the electron transport in two-dimensional GaAs/AlGaAs electron systems and optical properties of InGaAsN/GaAs single quantum well with different nitrogen content. This dissertation consists of the following three parts.
1. Peak values of resistivity in a high-mobility GaAs/AlGaAs electron system
We presented magneto transport measurements on a high-quality GaAs electron system. We found that the peak values of resistivity increase linearly with magnetic field and break down when spin splitting becomes resolved. This interesting phenomena can be well interpreted by the quantum diffusion model and Coleridge argued that we can estimate quantum lifetime using this model. In addition, we also observed quantum lifetime has the same temperature dependence on Shubnikov-de Hass (SdH) theory and quantum diffusion model, it implies SdH theory and quantum diffusion model need to be modified for my sample. We speculate this modification may be due to thermal broadening.
2. Upshift of the fractional quantum Hall plateaus
It is now established that if there are an equal number of positively and negatively charged impurities, the quantum Hall plateaus in
Subjects
氮砷化銦鎵單量子井
砷化鎵
GaAs
InGaAsN Single Quantum Well
Type
thesis
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