Fabrication and Analysis of Indium Gallium Oxide Transparent Conductive Oxide
Date Issued
2004
Date
2004
Author(s)
Wang, Sung-Li
DOI
zh-TW
Abstract
There are two issues in this thesis. The first issue is the growth of indium gallium oxide thin film. We grow indium gallium oxide thin film successfully in two ways. One way is by photoelectrical chemical method (PEC method). The other way is by thermal evaporation.
The second issue is the characteristics study of the indium gallium oxide thin film. After the growth of indium gallium oxide, we take some optical measurements such as transmission, reflection, and photoluminescence .Electrical measurements such as circle transmission line method (CTLM) and Hall measurement. Besides, SEM、EDX、XRD、XPS and surface profiler are also done on the samples in order to study the characteristics and quality of the oxide layer.
Finally, we make a discussion on the characteristics and quality issue of indium gallium oxide film. Our indium gallium oxide film has 80% of transparency while photon energy below 3.54 eV. And the lowest resistivity(ρ) is 4x10-3Ω-cm .
The second issue is the characteristics study of the indium gallium oxide thin film. After the growth of indium gallium oxide, we take some optical measurements such as transmission, reflection, and photoluminescence .Electrical measurements such as circle transmission line method (CTLM) and Hall measurement. Besides, SEM、EDX、XRD、XPS and surface profiler are also done on the samples in order to study the characteristics and quality of the oxide layer.
Finally, we make a discussion on the characteristics and quality issue of indium gallium oxide film. Our indium gallium oxide film has 80% of transparency while photon energy below 3.54 eV. And the lowest resistivity(ρ) is 4x10-3Ω-cm .
Subjects
氧化銦鎵
透明導電膜
IGO
TCL
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-93-R91941002-1.pdf
Size
23.31 KB
Format
Adobe PDF
Checksum
(MD5):3838522cab5be1206ef5159d91dffa09