A Novel Design of P Implanted Regions for a Power MOSFET

Journal
2018 International Meeting for Future of Electron Devices
Date Issued
2018
Author(s)
Yeh, W.-B.
Su, Y.-C.
Lee, K.-Y.
Cheng, C.-H.
Huang, C.-F.
DOI
URI
URL
Abstract
In this paper, a novel structure for a vertical power MOSFET is designed to have higher breakdown voltage and lower specific on-state resistance compared with a conventional vertical power MOSFET.
SDGs

[SDGs]SDG7

Description
Kansai
Type
conference paper

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