A Novel Design of P Implanted Regions for a Power MOSFET

Journal

2018 International Meeting for Future of Electron Devices

Date Issued

2018

Author(s)

Yeh, W.-B.

Su, Y.-C.

Lee, K.-Y.

Cheng, C.-H.

Huang, C.-F.

DOI

10.1109/IMFEDK.2018.8581972

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/451510

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85060704157&doi=10.1109%2fIMFEDK.2018.8581972&partnerID=40&md5=d9f0f1f44bcc0c48e811c2fd62837f9e

SDGs

[SDGs]SDG7

Description

Kansai

Type

conference paper