Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
31
Journal Issue
8 B
Pages
1164-1166
Date Issued
1992
Author(s)
Abstract
Oxide resistances, Rox's determined by the recently reported charge-then-decay method are used to predict the hot-carrier and radiation hardnesses of metal-oxide-semiconductor (MOS) capacitors. The measurement of Rox is nondestructive to tested samples. It is found that a sample with a large Rox sustains a high gate voltage during constant current stressing. After stressing, the generated interface trap state is large for this sample. Also, it is found that the radiation damage of an MOS capacitor is dependent on its Rox. Samples with larger Rox exhibit more radiation hardness than those with smaller Rox after Co-60 irradiations. Strained-bond-induced micropores are possible origins for these observations. © 1992 The Japan Society of Applied Physics.
Subjects
Charge-then-decay method; Hot carrier; Oxide resistance; Radiation
Other Subjects
Electric resistance; Electric variables measurement; Hardening; Hot carriers; Interfaces (materials); Leakage currents; MOS devices; Oxides; Radiation damage; Stresses; Charge then decay method; Metal oxide semiconductor (MOS) capacitors; Oxide resistance; Radiation hardness; Capacitors
Type
journal article