The Development and Application of Non-Equilibrium Quantum Transport Modeling for Transistors
Date Issued
2014
Date
2014
Author(s)
Lin, Yen-Chun
Abstract
This thesis studies the quantum transport effect by solving the Poisson and Schr odinger equation self-consistently. As we know, as the semiconductor scaling technology enters the nanoscale world, the classical carrier transport model by solving Poisson and drift-diffusion equation model becomes less valid, due to the ignorance of quantum wave pictures. To develop the program for modeling the nanostructure, the finite difference method with the simpli ed Schr odinger equation and considering the scattering effect is used for developing the program. Next, the nonequilibrium green function method is used for boundary condition and they are applied to solve the Schr odinger equation. The key feature of this study is successfully adding the scattering mechanism into the Schr odinger solver for energy relaxation in different energies and solve self-consistently. The last step is the Poisson equation and the Schr odinger Hamiltonian are self-consistently iterated to get the carrier density, current density, and potential of the
device. Several device structures are examined, including the tunneling structures, resonant tunneling devices, tunneling eld effect transistors, and n-i-n structures.
Subjects
量子輸運
電晶體元件
數值模擬及應用
Type
thesis
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