Atomic-scale variability and control of III-V nanowire growth kinetics
Journal
Science
Journal Volume
343
Journal Issue
6168
Pages
281-284
Date Issued
2014
Author(s)
Chou Y.-C.; Hillerich K.; Tersoff J.; Reuter M.C.; Dick K.A.; Ross F.M.
DOI
SCIEA
Abstract
In the growth of nanoscale device structures, the ultimate goal is atomic-level precision. By growing III-V nanowires in a transmission electron microscope, we measured the local kinetics in situ as each atomic plane was added at the catalyst-nanowire growth interface by the vapor-liquid-solid process. During growth of gallium phosphide nanowires at typical V/III ratios, we found surprising fluctuations in growth rate, even under steady growth conditions. We correlated these fluctuations with the formation of twin defects in the nanowire, and found that these variations can be suppressed by switching to growth conditions with a low V/III ratio. We derive a growth model showing that this unexpected variation in local growth kinetics reflects the very different supply pathways of the V and III species. The model explains under which conditions the growth rate can be controlled precisely at the atomic level.
Subjects
gallium; nanowire; catalyst; growth modeling; nanotechnology; reaction kinetics; transmission electron microscopy; article; kinetics; liquid; molecular model; pressure; priority journal; solid; transmission electron microscopy; vapor
Publisher
American Association for the Advancement of Science
Type
journal article