Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries
Journal
ACS Nano
Journal Volume
9
Journal Issue
9
Pages
8967-8975
Date Issued
2015
Author(s)
Wu, Han-Chun
Chaika, Alexander N.
Huang, Tsung-Wei
Syrlybekov, Askar
Abid, Mourad
Aristov, Victor Yu
Molodtsova, Olga V.
Babenkov, Sergey V.
Marchenko, D.
Sanchez-Barriga, Jaime
Mandal, Partha Sarathi
Varykhalov, Andrei Yu
Niu, Yuran
Murphy, Barry E.
Krasnikov, Sergey A.
Luebben, Olaf
Wang, Jing Jing
Liu, Huajun
Yang, Li
Zhang, Hongzhou
Abid, Mohamed
Janabi, Yahya T.
Molotkov, Sergei N.
Shvets, Igor
Abstract
Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ��0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.
SDGs
Type
journal article