Combination of Nitride semiconductor nanostructures and nano-photonics for efficient solid-state lighting
Journal
2007 International Nano-Optelectronics Workshop, iNOW
Pages
68-69
Date Issued
2007
Author(s)
Abstract
Nitride nanostructures and nano-photonics, including an MOCVD prestrained InGaN/GaN quantum well growth technique for orange and white LED fabrication and surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement, are reported. © 2007 IEEE.
Other Subjects
Chemical vapor deposition; Energy efficiency; Nanostructures; Nitrides; Optical design; Optics; Photonics; Semiconductor growth; Semiconductor quantum wires; Emission enhancement; InGaN/GaN; International (CO); Nano-photonics; Nitride nanostructures; Quantum wells; Semiconductor nano-structures; Solid-state lighting (SSL); Surface plasmon coupling; White LED; Semiconductor quantum wells
Type
conference paper