Ge-Rich SiGe Mode-Locker for Erbium-Doped Fiber Lasers
Journal
IEEE Journal of Selected Topics in Quantum Electronics
Journal Volume
24
Journal Issue
3
Date Issued
2018
Author(s)
Yang, C.-C.
Cheng, C.-H.
Chen, T.-H.
Lin, Y.-H.
Chi, Y.-C.
Tseng, W.-H.
Chang, P.-H.
Chen, C.-Y.
Chen, K.-H.
Chen, L.-C.
Wu, C.-I.
Lin, G.-R.
Abstract
A nonstoichiometric Si 1-x Ge x with composition ratio dependent saturable absorption prepared by vaporized synthesis and chemical exfoliation is performed to passively mode-lock the Erbium-doped fiber laser (EDFL). The Si 1-x Ge x with varied Ge/Si composition ratio from 3 to 16 exhibits tunable nonlinear modulation depth from 17% to 22%, where the Si 1-x Ge x with the highest Ge content performs the largest nonlinear modulation depth. When operating the EDFL in the self-amplitude modulation region, the Si 1-x Ge x with Ge/Si composition ratios of 3, 9, and 16 self-starts the EDFL pulsation with pulsewidths of 820, 760, and 730 fs. When operating the EDFL in high gain region, the self-phase modulation induced soliton compression dominates the repulsation of passively mode-locked EDFL, which slightly shrinks the EDFL pulsewidth from 346 to 338 fs. All these demonstrations are premier and important to explore the superior nonstoichiometric Si 1-x Ge x saturable absorbers for ultrafast fiber lasers.
Type
journal article