Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
Journal
Micromachines
Journal Volume
12
Journal Issue
7
Start Page
756
ISSN
2072-666X
Date Issued
2021-07-27
Author(s)
DOI
10.3390/mi12070756
Abstract
This research proposes a novel 4H-SiC power device structure-different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MOSFET, DC-FSJ MOSFET has a higher breakdown voltage (BV) and lower forward specific on-resistance (Ron,sp). The DC-FSJ MOSFET is formed by multiple epitaxial technology to create a floating P-type structure in the epitaxial layer. Then, a current spreading layer (CSL) is added to reduce the Ron,sp. The floating P-type structure depth, epitaxial layer concentration and thickness are optimized in this research. This structure can not only achieve a breakdown voltage over 3300 V, but also reduce Ron,sp. Under the same conditions, the Baliga Figure of Merit (BFOM) of DC-FSJ MOSFET increases by 27% compared with the traditional vertical MOSFET. Ron,sp is 25% less than that of the traditional vertical MOSFET.
Subjects
4H-SiC
Breakdown voltage
MOSFET
Silicon carbide
Specific on-resistance
Superjunction
Publisher
MDPI AG
Type
journal article