Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering
Journal
ACS Applied Materials & Interfaces
Journal Volume
15
Journal Issue
29
Start Page
35342
End Page
35349
ISSN
1944-8244
1944-8252
1944-8244
Date Issued
2023-07-13
Author(s)
Hai Yen Le Thi
Tien Dat Ngo
Nhat Anh Nguyen Phan
Hoseong Shin
Inayat Uddin
A. Venkatesan
Nobuyuki Aoki
Won Jong Yoo
Kenji Watanabe
Takashi Taniguchi
Gil-Ho Kim
Abstract
diode fabrication, the photovoltaic effect is achieved with a high fill factor of ?0.64, a power conversion efficiency of up to ?4.5%, and the highest external quantum efficiency with a value of ?67.6%. The photoresponsivity reaches 283 mA/W, indicating excellent photodiode performance. These results demonstrate that our technique has great potential for application in next-generation optoelectronic devices.
SDGs
Publisher
American Chemical Society (ACS)
Type
journal article