In-vitro Electrical Detection of Bacterial Pili with Silicon Nanowire Field-Effect Transistor
Date Issued
2007
Date
2007
Author(s)
Chiang, Pei-Ling
DOI
zh-TW
Abstract
Tremendous progress has been made in the development of nanowire/nanotube field effect transistors (FET) as biosensors in a variety of studies ranging from DNA,
proteins, to neuronal signal propagation. With the reduction of device dimensions, the charge carriers are confined to move in a finite space, thus enhancing the carrier mobility that exceeds the limits of conventional MOSFET. Moreover, the carrier density can be altered by a small change of surface potential, resulting in the high
sensitivity of NW/NT FET to a picomolarity level. Since the discovery of horizontal gene transfer in Agrobacterium tumefaciens in 1981, various investigations have been conducted to elaborate the mechanism of gene transfer. Although pilus which processes a 2 nm lumen in the center was found indispensable in the transfer process, there remain two debates. One argues that pili alone could transfer plasmids and served as conduit. The other states that cell contact is necessary for the plasmid transfer. Here, we apply silicon nanowire field-effect transistors (SiNW-FET), for the first time, as a sensitive tool to detect the T-pili in vitro with a very high sensitivity to a picomolarity level, thus offering a new opportunity to investigate the mechanism of gene transfer.
Subjects
矽奈
米線
場效應電晶體
細菌
線毛
Pili
Silicon Nanowire
Field-Effect Transistor
Agrobacterium tumefaciens
Type
thesis
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