Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s
Journal
Nanoscale Research Letters
Journal Volume
14
Journal Issue
1
Pages
276
Date Issued
2019
Author(s)
Shen, Chih-Chiang
Hsu, Tsung-Chi
Yeh, Yen-Wei
Kang, Chieh-Yu
Lu, Yun-Ting
Lin, Hon-Way
Tseng, Hsien-Yao
Chen, Yu-Tzu
Chen, Cheng-Yuan
Lee, Po-Tsung
Sheng, Yang
Chiu, Ching-Hsueh
Kuo, Hao-Chung
Abstract
We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C. © 2019, The Author(s).
Subjects
50 Gb/s; Cavity length; High-speed VCSEL; Oxide aperture; PICS3D
SDGs
Other Subjects
Fabrication; Frequency response; Gallium arsenide; III-V semiconductors; Transceivers; Cavity length; Data rates; High Speed; Oxide aperture; PICS3D; Response performance; Simulation program; Surface emitting lasers
Type
journal article