Mobility strain response and low temperature characterization of Ge p-MOSFETs
Journal
Device Research Conference, DRC
Pages
73-74
Date Issued
2013
Author(s)
Abstract
Ge is one of the most promising candidate for p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) because its highest hole mobility than Si and III-V materials. Since the carrier mobility depends on both the substrate orientation and channel direction. The calculation shows that (110) Ge p-MOSFET has the highest unstrained hole mobility with the channel direction. To further improve the performance, the compressive stress is applied mechanically to enhance the hole mobility. The source/drain (S/D) resistance is also reduced using the NiGe contact electrodes.
SDGs
Type
conference paper