Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate

Journal

Journal of Applied Physics

Journal Volume

96

Journal Issue

5

Pages

3025-3027

Date Issued

2004

Author(s)

Lin, G.-R.

Lin, C.-J.

DOI

10.1063/1.1775041

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/500092

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-5044232551&doi=10.1063%2f1.1775041&partnerID=40&md5=e78e77c33ee2c9146410a717a6dfd079

Type

journal article